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參數(shù)資料
| 型號： | AP9479GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 5.6 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | AP9479GM |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP9479GM
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
3
6
9
12
15
0
10
20
30
Q
G
, Total Gate Charge (nC)
V
G
I
D
=5A
V
DS
=30V
V
DS
=38V
V
DS
=48V
10
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
I
D
(
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
10
20
30
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
I
D
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 125
℃
/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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相關代理商/技術參數(shù) |
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|---|---|
| AP9479GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge |
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| AP9482 | 制造商:Schneider Electric 功能描述:INFRASTRUXURE CENTRAL BASIC MANAGEMENT PACK - Bulk |
| AP9485 | 制造商:Schneider Electric 功能描述:INFRASTRUXURE CENTRAL ENTERPRISE MANAGEMENT PACK - Bulk |
| AP9487GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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