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參數(shù)資料
| 型號： | AP9478M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強型功率MOSFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 114K |
| 代理商： | AP9478M |
AP9478M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=25
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
10V
7.0V
5.0V
4.5V
V
G
=3.0V
T
A
=150
o
C
50
55
60
65
70
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=3A
T
A
=25
℃
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=4A
V
G
=10V
0.3
0.6
0.9
1.2
1.5
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
相關PDF資料 |
PDF描述 |
|---|---|
| AP9479GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9563GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9563GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9563GK | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9563GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AP9479GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9479GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge |
| AP9480 | 制造商:American Power Conversion Corp (APC by Schneider Electric) 功能描述:Infrastruxure Central Standard Pilot Pak 制造商:Schneider Electric 功能描述:APC - Bulk |
| AP9482 | 制造商:Schneider Electric 功能描述:INFRASTRUXURE CENTRAL BASIC MANAGEMENT PACK - Bulk |
| AP9485 | 制造商:Schneider Electric 功能描述:INFRASTRUXURE CENTRAL ENTERPRISE MANAGEMENT PACK - Bulk |
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