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參數(shù)資料
| 型號(hào)： | AP9475GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 6.9 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 81K |
| 代理商： | AP9475GM |
AP9475GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0
20
40
60
80
100
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=25
o
C
10V
6.0V
5.0V
4.5V
V
G
=3.0V
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
10V
6.0V
5.0V
4.5V
V
G
=3.0V
T
A
=150
o
C
32
34
36
38
40
42
44
46
3
5
7
9
11
V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=4A
T
A
=25
℃
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=6A
V
G
=10V
0.50
0.75
1.00
1.25
1.50
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
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| AP9475M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9478GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9478M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9475GM_08 | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge |
| AP9475GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9475M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9476GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
| AP9476GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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