參數(shù)資料
型號(hào): AP9468GJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 75 A, 40 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 203K
代理商: AP9468GJ
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9468GH/J
0
1
10
100
1000
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
I D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
ormalize
dT
h
ermal
Re
spon
se
(
R
th
jc
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
4
8
12
16
0
2040
6080
Q G , Total Gate Charge (nC)
V
GS
,G
ate
to
S
ou
rc
eVoltage
(
V
)
I D =30A
V DS =20V
V DS =25V
V DS =30V
100
1000
10000
1
5
9
131721
2529
V DS ,Drain-to-Source Voltage (V)
C
(
pF)
f=1.0MHz
C iss
C oss
C rss
Q
VG
4.5V
QGS
QGD
QG
Charge
0
40
80
120
160
200
240
01
234
56
V GS , Gate-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T j =150
o C
T j =25
o C
V DS =5V
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