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參數(shù)資料
| 型號(hào)： | AP9465GEM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 40 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 238K |
| 代理商： | AP9465GEM |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
40V
▼ Fast Switching Characteristic
RDS(ON)
25mΩ
▼ Low On-resistance
ID
7.8A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
50
℃
/W
Data and specifications subject to change without notice
1
AP9465GEM
RoHS-compliant Product
200811133
Parameter
Rating
Drain-Source Voltage
40
Gate-Source Voltage
+16
Continuous Drain Current
3
7.8
Continuous Drain Current
3
6.3
Pulsed Drain Current
1
30
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Thermal Data
Parameter
Storage Temperature Range
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching,ruggedized device
design, ultra low on-resistance and cost-effectiveness.
S
G
D
SO-8
S
G
D
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
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