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參數(shù)資料
| 型號： | AP9452GG |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 4 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-4 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | AP9452GG |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.03
-
V/
℃
R
DS(ON)
V
GS
=10V, I
D
=4A
-
-
38
m
Ω
V
GS
=4.5V, I
D
=4A
V
GS
=2.5V, I
D
=3A
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=3A
V
DS
=20V, V
GS
=0V
V
DS
=16V ,V
GS
=0V
V
GS
=
I
D
=4A
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
R
G
=3.3
Ω
,
V
GS
=5V
R
D
=10
Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
-
-
50
m
Ω
-
-
-
80
1.5
-
1
25
m
Ω
V
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
2
0.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
6
1
2
8
9
13
3
360
80
65
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
10
-
-
-
-
-
-
570
-
-
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
Typ.
-
18
Max.
1.3
-
Units
V
ns
Forward On Voltage
2
Reverse Recovery Time
I
S
=1A, V
GS
=0V
I
S
=4A,
V
GS
=0
V
,
dI/dt=100A/μs
Reverse Recovery Charge
-
10
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mount on FR4 board, t < 10s.
AP9452GG
±16V
±
100
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