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參數(shù)資料
| 型號(hào)： | AP9435GK |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 6 A, 30 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-4 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | AP9435GK |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=-1mA
Static Drain-Source On-Resistance
2
-
-0.02
-
V/
℃
R
DS(ON)
V
GS
=-10V, I
D
=-5.3A
-
-
50
m
Ω
V
GS
=-4.5V, I
D
=-4.2A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-5.3A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=
I
D
=-5.3A
V
DS
=-24V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
R
G
=6
Ω
,
V
GS
=-10V
R
D
=15
Ω
V
GS
=0V
V
DS
=-15V
f=1.0MHz
-
-
100
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
-1
-
-
-3
-
V
S
uA
10
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
-
-
-
-
-
-
-
-
-
-
-1
-25
±
100
Drain-Source Leakage Current (T
j
=70
o
C)
uA
nA
nC
nC
nC
ns
ns
ns
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
9.2
2.8
5.2
11
8
25
16
-
-
-
-
-
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
17
507
222
158
-
ns
912
-
-
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Parameter
Test Conditions
I
S
=-2.3A, V
GS
=0V
I
S
=-5.3A,
V
GS
=0
V
,
dI/dt=100A/μs
Min. Typ. Max. Units
-
-
Forward On Voltage
2
-1.2
V
Reverse Recovery Time
-
29
-
ns
Qrr
Reverse Recovery Charge
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 120
℃
/W when mounted on Min. copper pad.
AP9435GK
±
25V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9435GK-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
| AP9435GK-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET PCH -30V 50MOHM SOT-223 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 50MOHM, SOT-223 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 50MOHM, SOT-223, Transistor Polarity:P Channel, Continuous Drain Current Id:-6A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.05ohm, Rds(on) Test Voltage Vgs:-10V, Power Dissipation Pd:2.7W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, PCH, -30V, 50MOHM, SOT-223, Transistor Polarity:P Channel, Continuous Dr |
| AP9435GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
| AP9435GM-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET PCH -30V 50MOHM SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 50MOHM, SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 50MOHM, SO-8, Transistor Polarity:P Channel, Continuous Drain Current Id:-5.3A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.05ohm, Rds(on) Test Voltage Vgs:-10V, Power Dissipation Pd:2.5W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, PCH, -30V, 50MOHM, SO-8, Transistor Polarity:P Channel, Continuous Drain |
| AP9435GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low Gate Charge, Simple Drive Requirement |
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