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參數(shù)資料
| 型號(hào)： | AP9435GG |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 30 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 82K |
| 代理商： | AP9435GG |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1ms
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP9435GG
100
1000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ Ta
R
thja
=100
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-
D
(
100us
10ms
100ms
1s
10s
T
A
=25
o
C
Single Pulse
0
3
6
9
12
0
5
10
15
20
25
Q
G
, Total Gate Charge (nC)
-
G
I
D
=-4A
V
DS
=-25V
0
5
10
15
20
0
2
4
6
-V
GS
, Gate-to-Source Voltage (V)
-
D
T
j
=150
o
C
T
j
=25
o
C
V
DS
=-5V
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9435GG-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Fast Switching Characteristic, Single Drive Requirement |
| AP9435GH | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9435GJ | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9435GK | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9435GK-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
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