參數(shù)資料
型號： AP86T02GJ-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝： HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 3/5頁
文件大?。?/td> 264K
代理商： AP86T02GJ-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP86T02GH/J-HF
4
8
12
16
2468
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =30A
T c =25 ℃
0.0
0.4
0.8
1.2
25
50
75
100
125
150
175
T j ,Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0
50
100
150
200
01
23
45
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
V G =3.0V
10V
7.0V
5.0V
4.5V
0
30
60
90
120
012
345
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
V G = 3 .0V
T C = 175
o C
10V
7.0V
5.0V
4.5V
0.6
1.0
1.4
1.8
25
50
75
100
125
150
175
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =45A
V G =10V
0
10
20
30
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Is
(
A
)
T j =25
o C
T j =175
o C
相關(guān)PDF資料
PDF描述
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