參數(shù)資料
型號: AP85U03GM-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件頁數(shù): 2/4頁
文件大?。?/td> 93K
代理商: AP85U03GM-HF
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=16A
-
5
m
VGS=4.5V, ID=10A
-
9
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=10A
-
25
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=10A
-
38
61
nC
Qgs
Gate-Source Charge
VDS=15V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
20.5
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
13
-
ns
tr
Rise Time
ID=1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
53
-
ns
tf
Fall Time
RD=15Ω
-28
-
ns
Ciss
Input Capacitance
VGS=0V
-
2910 4660
pF
Coss
Output Capacitance
VDS=25V
-
475
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
445
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=2.1A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=10A, VGS=0V,
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
43
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
2
AP85U03GM-HF
相關(guān)PDF資料
PDF描述
AP86T02GJ-HF 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP86T02GH-HF 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP88N30W 48 A, 300 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET
AP90T03GHR 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9404GH-HF 30 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP85U03GMT 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP85U03GMT-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, SO-8 Compatible
AP85U03GP-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement
AP8641 制造商:American Power Conversion Corp (APC by Schneider Electric) 功能描述:RACK PDU 2G, SWITCHED PLUS, ZE 制造商:Schneider Electric 功能描述:RACK PDU 2G, SWITCHED PLUS, ZEROU, 30A, 200/208V, (21) C13 & - Bulk
AP8641X629 制造商:Schneider Electric 功能描述:- Bulk