參數(shù)資料
型號： AP85G33W
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： IGBT 晶體管
英文描述： 85 A, 330 V, N-CHANNEL IGBT
封裝： ROHS COMPLIANT, TO-3P, 3 PIN
文件頁數(shù)： 3/3頁
文件大?。?/td> 96K
代理商： AP85G33W
Fig7. Power Dissipation vs. Junction
Fig 8. Effective Transient Thermal
Temperature
Impedance
Fig 9. Saturation Voltage vs. VGE
Fig 10. Saturation Voltage vs. VGE
--
Fig 11. Forward Characteristic of
Fig 12. SOA Characteristics
Diode
3/3
AP85G33W
0
5
10
15
20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V
CE
,
Co
llecto
r-
E
m
itter
Vo
lta
g
e(
V
)
I C = 100 A
50 A
25 A
T C =25
o C
0
5
10
15
20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V
CE
,
Co
llecto
r-
E
m
itter
Vo
lta
g
e(
V
)
I C = 100 A
50 A
25 A
T C = 150
o C
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
No
rm
a
lized
T
h
erm
a
lResp
o
n
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
10
1000
0.1
10
1000
V CE ,Collector - Emitter Voltage(V)
I
C
,Co
llcto
r
Current(
A
)
T c =25
o C
Single Pulse
100 uS
1 mS
100 mS
DC
0
5
10
15
20
25
30
0
0.4
0.8
1.2
1.6
2
V F , Forward Voltage (V)
I
F
,Forward
Curre
nt
(
A
)
T j =25
o C
T j =150
o C
0
50
100
150
200
0
50
100
150
200
Junction Temperature ( ℃ )
P
o
we
rD
issipation
(
W
)
相關(guān)PDF資料
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