參數(shù)資料
型號： AP6921GMT-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 34 A, 30 V, 0.0115 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
文件頁數(shù)： 4/7頁
文件大小： 128K
代理商： AP6921GMT-HF
AP6921GMT-HF
Channel-1
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
4
0
10
20
30
40
50
012
345
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0
10
20
30
40
50
012
345
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
10V
7.0V
6.0V
5.0V
V G = 4.0V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =10A
V G =10V
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
5
11
17
23
2468
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =6A
T A =25
o C
0.0
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
I D =1mA
相關PDF資料
PDF描述
AP70L02GH 66 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP70L02GJ 66 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP70T03GS 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP70T03GP 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP70U02GH 60 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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