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參數(shù)資料
| 型號(hào)： | AP6900GSM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 134K |
| 代理商： | AP6900GSM |
Advanced Power
DUAL N-CHANNEL MOSFET WITH
Electronics Corp.
SCHOTTKY DIODE
▼ Simple Drive Requirement
CH-1 BVDSS
30V
▼ DC-DC Converter Suitable
RDS(ON)
30mΩ
▼ Fast Switching Performance
ID
5.7A
CH-2 BVDSS
30V
RDS(ON)
22mΩ
Description
ID
9.8A
Absolute Maximum Ratings
Symbol
Rating
Units
Channel-2
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current
3
9.8
A
ID@TA=70℃
Continuous Drain Current
3
7.8
A
IDM
Pulsed Drain Current
1
30
A
PD@TA=25℃
Total Power Dissipation
2.2
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Units
Max.
Rthj-a (CH-1)
Thermal Resistance Junction-ambient
3
90
℃
/W
Rthj-a (CH-2)
Thermal Resistance Junction-ambient
3
55
℃
/W
Data and specifications subject to change without notice
AP6900GSM
Channel-1
Pb Free Plating Product
Thermal Data
Typ.
70
Parameter
5.7
4.6
20
30
±20
1.4
0.01
201121063-1/9
42
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
D1
G2
S2/A
G1
S1/D2
SO-8
G1
D1
S1/D2
G2
N-Channel 1
MOSFET
S2/A
N-Channel 2
MOSFET
Schottky Diode
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