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參數(shù)資料
| 型號： | AP6800GEO |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, TSSOP-8 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 107K |
| 代理商： | AP6800GEO |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V, ID=6A
-
20
mΩ
VGS=4V, ID=4A
-
21
mΩ
VGS=2.5V, ID=2A
-
25
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
1.2
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
6
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=20V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=16V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±10V
-
±30
uA
Qg
Total Gate Charge
2
ID=6A
-
23.4
37
nC
Qgs
Gate-Source Charge
VDS=15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
11.1
-
nC
td(on)
Turn-on Delay Time
2
VDS=10V
-
8.2
-
ns
tr
Rise Time
ID=1A
-
18.4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
19.6
-
ns
tf
Fall Time
RD=10Ω
-58
-
ns
Ciss
Input Capacitance
VGS=0V
-
580
930
pF
Coss
Output Capacitance
VDS=20V
-
315
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
165
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=0.84A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=6A, VGS=0V,
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
39
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
2/4
AP6800GEO
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