- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51258 > AP62T02GJ (ADVANCED POWER ELECTRONICS CORP) 48 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 PDF資料下載
參數(shù)資料
| 型號(hào)： | AP62T02GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 48 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 69K |
| 代理商： | AP62T02GJ |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=30A
-
10
12
mΩ
VGS=4.5V, ID=15A
-
13
16
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
1.5
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
34
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=175
oC)
VDS=24V ,VGS=0V
-
250
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=30A
-
13
20
nC
Qgs
Gate-Source Charge
VDS=24V
-
2.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
7.5
-
ns
tr
Rise Time
ID=30A
-
90
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=0.5Ω
-
6.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
950
1420
pF
Coss
Output Capacitance
VDS=25V
-
220
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
160
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=30A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=20A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
25
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25
oC , V
DD=25V , L=0.1mH , RG=25Ω , IAS=24A.
2/4
AP62T02GH/J
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP62T02GH | 48 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP6679GP | 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP6679GS | 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP6679GS-A | 65 A, 40 V, 0.0135 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP6679GP-A | 65 A, 40 V, 0.0135 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP62T03GH-J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
| AP62T03GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
| AP6-30087-1 | 制造商:Sensata Technologies 功能描述:AP6-30087-1 /Pole # 1 /Prod Family: 0202 |
| AP630GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP630P | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。