- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51258 > AP60U03GH (ADVANCED POWER ELECTRONICS CORP) 40 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 PDF資料下載
參數(shù)資料
| 型號(hào)： | AP60U03GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 124K |
| 代理商： | AP60U03GH |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=24A
-
12
mΩ
VGS=4.5V, ID=16A
-
24
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
28
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
1
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=30A
-
13
21
nC
Qgs
Gate-Source Charge
VDS=24V
-
2.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
7
-
ns
tr
Rise Time
ID=30A
-
91
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=0.5Ω
-10
-
ns
Ciss
Input Capacitance
VGS=0V
-
700
1120
pF
Coss
Output Capacitance
VDS=25V
-
155
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
150
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=24A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=10A, VGS=0V,
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
12
-
nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP60U03GH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP62T02GJ | 48 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP62T02GH | 48 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP6679GP | 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP6679GS | 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP6679GS-A | 65 A, 40 V, 0.0135 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP-610-G-A | 制造商:Samtec Inc 功能描述:CONN DIP ADPTR PL 10 POS 2.54MM ST TH - Bulk |
| AP-610-G-A1 | 制造商:Samtec Inc 功能描述:CONN DIP ADPTR PL 10 POS 2.54MM ST TH - Bulk |
| AP-610-G-B | 制造商:Samtec Inc 功能描述:CONN DIP ADPTR PL 10 POS 2.54MM ST TH - Bulk |
| AP-610-G-C | 制造商:Samtec Inc 功能描述:CONN DIP ADPTR PL 10 POS 2.54MM ST TH - Bulk |
| AP-610-G-D | 制造商:Samtec Inc 功能描述:CONN DIP ADPTR PL 10 POS 2.54MM ST TH - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。