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參數(shù)資料
| 型號(hào)： | AP60T10GI-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | AP60T10GI-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Lower On-resistance
RDS(ON)
18mΩ
▼ RoHS Compliant & Halogen-Free
ID
34A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.8
℃/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
201002121
1
AP60T10GI-HF
-55 to 150
Halogen-Free Product
Parameter
Rating
Drain-Source Voltage
100
Gate-Source Voltage
+20
Continuous Drain Current, VGS@10V
34
Continuous Drain Current, VGS@10V
22
Pulsed Drain Current
1
120
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
44.6
-55 to 150
Operating Junction Temperature Range
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
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