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參數(shù)資料
| 型號： | AP5521GM-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 2.5 A, 100 V, 0.15 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 119K |
| 代理商： | AP5521GM-HF |
N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
V
VGS=10V, ID=2A
-
120
150
m
VGS=5V, ID=1A
-
145
250
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.4
3
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
3.3
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=2A
-
6
10
nC
Qgs
Gate-Source Charge
VDS=50V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
2
VDS=50V
-
4.5
-
ns
tr
Rise Time
ID=1A
-
6.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-16
-
ns
tf
Fall Time
VGS=10V
-
5.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
420
670
pF
Coss
Output Capacitance
VDS=15V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1.5A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=2A, VGS=0V
-
35
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
50
-
nC
2
AP5521GM-HF
RDS(ON)
Static Drain-Source On-Resistance
2
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