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參數(shù)資料
| 型號： | AP501 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 放大器 |
| 英文描述： | 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT PACKAGE-6 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 840K |
| 代理商： | AP501 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 2 of 5 July 2008
AP501
PCS-band 4W HBT Amplifier Module
Product Information
Performance Graphs – Class AB Configuration (AP501-PCB)
The AP501-PCB and AP501 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for
the amplifier is set at 0 in this configuration. Increasing that value will decrease the quiescent and operating current of the
amplifier module, as described on the next page.
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
Narrowband S-Parameters
+25 °C, Icq=850mA
27
28
29
30
31
32
33
1930
1950
1970
1990
Frequency (MHz)
S
21
(dB)
-30
-25
-20
-15
-10
-5
0
S1
1,
S
2
(
d
B)
S21
S11
S22
PAE / Icc vs. Output Power
1960 MHz, +25 °C, Icq=850mA
750
800
850
900
950
1000
24
26
28
30
32
34
Output Power (dBm)
Ic
c
(mA
)
0
5
10
15
20
25
PAE
(%)
Icc
PAE
Gain / Output Power vs. Input Power
1960 MHz, +25 °C, Icq=850mA
26
28
30
32
34
36
-6
-4
-2
0246
Input Power (dBm)
Po
ut
(d
Bm)
30
30.5
31
31.5
32
32.5
Ga
in
(d
B)
Pout
Gain
Wideband S-Parameters
+25 °C, Icq=850mA
-40
-20
0
20
40
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
Ma
gnitude
(dB)
S21
S11
S22
ACPR vs. Channel Power
IS-95A, 9 Channels forward, 1FA, 1960 MHz, Icq=850mA
-90
-80
-70
-60
-50
22
23
24
25
26
27
28
Output Channel Power (dBm)
ACPR
(
d
Bc)
±885 kHz
±1.25 MHz
ACLR vs. Channel Power
+25°C, 3GPP wCDMA, 1FA, 1+32 DPCH, ±5 MHz offset, 1960 MHz, Icq=850mA
-70
-60
-50
-40
18
20
22
24
26
28
Output Channel Power (dBm)
ACLR
(dBc)
-40 C
+25 C
+85 C
DNP
0
10
μF
.01
μF
.01
μF
100pF
+
12V
+1
2
V
GND
+5
V
6
5
4
2
3
1
RF IN
RF OUT
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