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參數(shù)資料
| 型號： | AP4575M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 134K |
| 代理商： | AP4575M |
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼
Simple Drive Requirement
N-CH
BV
DSS
R
DS(ON)
I
D
BV
DSS
R
DS(ON)
I
D
60V
36m
Ω
6A
-60V
72m
Ω
-4.2A
▼
Low On-resistance
▼
Fast Switching Performance
P-CH
Description
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
P
D
@T
A
=25
℃
Drain-Source Voltage
60
-60
V
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
±20
±20
V
6
-4.2
A
4.7
-3.3
A
30
-30
A
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/
℃
T
STG
T
J
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
℃
/W
Data and specifications subject to change without notice
Parameter
200607041
Thermal Data
AP4575M
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
SO-8
G2
D2
S2
G1
D1
S1
S1G1
S2
G2
D1D1
D2
D2
SO-8
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