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參數(shù)資料
| 型號： | AP4506GEH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-5 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 119K |
| 代理商： | AP4506GEH |
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
30V
▼ Good Thermal Performance
RDS(ON)
24mΩ
▼ Fast Switching Performance
ID
9A
P-CH BVDSS
-30V
RDS(ON)
36mΩ
Description
ID
-8A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TA=25℃
Continuous Drain Current
3
9
-8
A
I
D@TA=70℃
Continuous Drain Current
3
7.2
-6.4
A
IDM
Pulsed Drain Current
1
50
-50
A
PD@TA=25℃
Total Power Dissipation
3.1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
8
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
40
℃
/W
Data and specifications subject to change without notice
200902103
Parameter
1
Thermal Data
AP4506GEH
RoHS-compliant Product
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
S1
TO-252-4L
G1
S2
G2
D1/D2
S1
G1
D1
S2
G2
D2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4506GEH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4506GEM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4506GEM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP4509AGH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Good Thermal Performance |
| AP4509AGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
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