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參數(shù)資料
| 型號： | AP4501SSD |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N型肖特基和P溝道增強型功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 113K |
| 代理商： | AP4501SSD |
Advanced Power
Electronics Corp.
N with Schottky AND P-CHANNEL
ENHANCEMENT MODE POWER MOSFET
▼
Simple Drive Requirement
Low On-resistance
Fast Switching
N-CH
BV
DSS
R
DS(ON)
I
D
BV
DSS
R
DS(ON)
I
D
30V
36m
Ω
5.3A
-30V
60m
Ω
-4.2A
▼
▼
P-CH
Description
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
30
±20
Units
P-channel
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
P
D
@T
A
=25
℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
-30
±20
V
V
-4.2
-3.5
-30
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
62.5
Unit
℃
/W
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
-55 to 125
0.016
-55 to 150
4.3
40
2
Parameter
200221031
AP4501SSD
Thermal Data
5.3
The Advanced Power MOSFETs from APEC provide the
design with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
AP4501SSD included N , P channel enhancement mode
power MOSFET and Shottky diode.
D1
D1
D2
D2
S1/A
G1S2
G2
PDIP-8
G2
D2
S2
G1
D1
S1
K
A
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| AP4502AGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge |
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| AP4503AGEM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4503AGM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4503AGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Fast Switching Performance |
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