參數(shù)資料
型號: AP4425GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 35 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 1/2頁
文件大小: 197K
代理商: AP4425GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
35V
▼ Fast Switching Characteristic
RDS(ON)
9mΩ
▼ RoHS Compliant
ID
13A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance Junction-ambient
3
50
/W
Data and specifications subject to change without notice
200811032
1
AP4425GM
Rating
35
+20
13
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
0.02
Storage Temperature Range
Continuous Drain Current
3
10
Pulsed Drain Current
1
52
RoHS-compliant Product
Thermal Data
Parameter
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
G
D
SO-8
G
D
S
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