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參數(shù)資料
| 型號(hào)： | AP4413M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE |
| 中文描述： | P溝道增強(qiáng)型 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | AP4413M |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-20
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=-1mA
Static Drain-Source On-Resistance
2
-
-0.01
-
V/
℃
R
DS(ON)
V
GS
=-10V, I
D
=-7A
-
-
30
m
Ω
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-2A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-7A
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=
I
D
=-7A
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-2A
R
G
=3.3
Ω
,
V
GS
=-10V
R
D
=10
Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
-
-
40
m
Ω
-
-
65
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
-0.5
-
-1.5
V
Forward Transconductance
-
16
-
S
uA
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
-1
Drain-Source Leakage Current (T
j
=70
o
C)
-
-
-25
±
100
uA
I
GSS
Gate-Source Leakage
Total Gate Charge
2
-
-
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
-
17
27
nC
Gate-Source Charge
-
4
-
nC
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
-
7
-
nC
-
12
-
ns
Rise Time
-
11
-
ns
Turn-off Delay Time
-
40
-
ns
Fall Time
-
13
-
ns
Input Capacitance
-
1140
1820
pF
Output Capacitance
-
250
-
pF
Reverse Transfer Capacitance
-
210
-
pF
Gate Resistance
f=1.0MHz
-
4.3
-
Source-Drain Diode
Symbol
V
SD
t
rr
Parameter
Test Conditions
Min.
-
-
Typ.
-
28
Max.
-1.2
-
Units
V
ns
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=-2A, V
GS
=0V
I
S
=-7A,
V
GS
=0
V
,
Q
rr
Reverse Recovery Charge
dI/dt=100A/μs
-
22
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 125
℃
/W when mounted on Min. copper pad.
AP4413M
±20V
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| AP4415GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
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| AP4415GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4416GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
| AP4417GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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