參數(shù)資料
型號: AP4410M
廠商: ADVANCED POWER ELECTRONICS CORP
英文描述: N-CHANNEL ENHANCEMENT MODE
中文描述: N溝道增強模式
文件頁數(shù): 2/4頁
文件大?。?/td> 81K
代理商: AP4410M
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.037
-
V/
R
DS(ON)
V
GS
=10V, I
D
=10A
-
-
13.5
m
Ω
V
GS
=4.5V, I
D
=5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V, I
D
=10A
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=
I
D
=10A
V
DS
=15V
V
GS
=5V
V
DS
=25V
I
D
=1A
R
G
=3.3
Ω
,
V
GS
=5V
R
D
=25
Ω
V
GS
=0V
V
DS
=15V
f=1.0MHz
-
-
22
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
1
-
-
3
-
V
S
uA
20
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
-
-
-
-
-
-
-
-
-
-
1
25
Drain-Source Leakage Current (T
j
=70
o
C)
uA
nA
nC
nC
nC
ns
ns
ns
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
13.5
4
7
14
16
21
-
-
-
-
-
-
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
15
1160
240
165
-
-
-
-
ns
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Parameter
Test Conditions
I
S
=2.1A, V
GS
=0V
I
S
=5A,
V
GS
=0
V
,
dI/dt=100A/μs
Min.
-
Typ.
-
Max.
1.2
Units
V
Forward On Voltage
2
Reverse Recovery Time
-
17.1
-
ns
Qrr
Reverse Recovery Charge
-
12
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 125
/W when mounted on Min. copper pad.
AP4410M
±
25V
±
100
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