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參數(shù)資料
| 型號(hào)： | AP4409GM |
| 廠(chǎng)商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | AP4409GM |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP4409GM
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja=125
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
30
60
90
120
0
2
4
6
8
-V
GS
, Gate-to-Source Voltage (V)
-
D
T
j
=150
o
C
T
j
=25
o
C
V
DS
=-5V
0
4
8
12
16
0
15
30
45
60
75
90
Q
G
, Total Gate Charge (nC)
-
G
I
D
= -13A
V
DS
= -24V
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-
D
(
T
A
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
DC
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
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