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參數(shù)資料
| 型號(hào)： | AP4232GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | AP4232GM |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low On-Resistance
BV
DSS
R
DS(ON)
I
D
30V
22m
Ω
7.8A
▼
Simple Drive Requirement
▼
Dual N MOSFET Package
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
P
D
@T
A
=25
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
62.5
Unit
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
Pb Free Plating Product
Thermal Data
Parameter
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current
3
Pulsed Drain Current
1
6.2
30
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
200112051
AP4232GM
Rating
30
±20
7.8
0.016
S1G1
S2G2
D1
D1
D2
D2
SO-8
G2
D2
S2
G1
D1
S1
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|---|---|
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