參數(shù)資料
型號： AP4002T
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： 小信號晶體管
英文描述： 400 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 3/5頁
文件大?。?/td> 109K
代理商： AP4002T
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
AP4002T
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
0
1
2
3
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
R
DS(ON)
I D =400mA
V G =10V
0
0.5
1
1.5
2
04
8
12
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
10V
7.0V
6.0V
5.0V
V G = 4.5 V
0
0.5
1
1.5
2
0
4
8
121620
2428
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
10V
7.0V
6.0V
5.0V
V G = 4.5 V
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j = 150
o C
T j = 25
o C
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
V
GS(t
h)
(V
)
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