- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄57941 > AP3 (TRIQUINT SEMICONDUCTOR INC) S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET PDF資料下載
參數(shù)資料
| 型號(hào)： | AP3 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | LGA-9 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | AP3 |
WJ Communications, Inc. Phone: 1-800-WJ1-4401 FAX: 408-577-6620 e-mail: sales@wj.com Web site: www.wj.com
February 2002
AP3
Product Description
The AP3 is a high dynamic range FET pack-
aged in a high frequency surface mount pack-
age. The combination of low noise figure and
high output IP3 at the same bias point makes it
ideal for receiver and transmitter applications.
The AP3 achieves +39 dBm OIP3 at a mount-
ing temperature of 80C with an associated
MTBF of >100 years4. The package is a 3 X 3
Land Grid Array (LGA). All devices are 100%
RF and DC tested. The product is targeted for
applications where high linearity is required.
Product Features
100-6000 MHz
+39 dBm Output IP3
2 dB Noise Figure
15 dB Gain
+25 dBm P1dB
MTBF >100 Years
3 X 3 LGA SMT Package
Functional Diagram
Gate
(Neg bias)
Drain
(Pos bias)
Pin 1 indicator
All other pins including
center pin are grounded
High Dynamic Range FET
Specifications
DC Electrical Parameter
Units
Minimum
Typical
Maximum
Condition
Saturated Drain Current, Idss
mA
220
340
380
Vgs = 0V
Transconductance, Gm
mS
120
Pinch Off Voltage, Vp
V
-5.0
-3.7
Ids = 1.2 mA
RF Parameter
Units
Minimum
Typical
Maximum
Condition
Small Signal Gain, Gss
dB
13
15
Maximum Stable Gain, Gmsg
dB
22.5
Output IP3
dBm
36
39
Output P1dB
dBm
23.5
25
Noise Figure, NF
dB
2
Notes:
1. DC and RF parameters measured under the following conditions unless otherwise noted.
22°C with Vds = 8.0 volts, Ids = 100 mA, Test frequency = 800 MHz, 50 system.
2. Idss is measured with Vgs = 0 V.
3. Pinch off voltage is measured when Ids = 0.6 mA.
4. MTBF calculated with channel temperature at 155C.
Absolute Maximum Ratings
Parameter
Rating
Drain to Source Voltage
9 V
Gate to Source Voltage
-6.0 V
Operating Case Temperature
-40 to +80 °C
Storage Temperature
-55 to +125°C
Input RF Power (continuous)
+12 dBm
Gate Current
6 mA
Maximum DC Power
0.9 W
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
AP3
High Dynamic Range FET
(Available in tape and reel)
TOP VIEW
The Communications Edge
Advanced Product Information
Actual Size
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP4002T | 400 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| AP4085W | 16 A, 500 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP40N03GP | 40 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP40T10GH | 39 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP40T10GP | 39 A, 105 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A-P3(10pcs) | 制造商:Takachi Electric Industrial 功能描述:Bulk |
| AP30 | 功能描述:整流器/與可變電容器 250volts 1.5pF-30pF RoHS:否 制造商:Xicon 電容范圍:2.8 pF to 12.5 pF 容差: 電壓額定值:200 V 工作溫度范圍:- 35 C to + 85 C 端接類型:SMD/SMT 產(chǎn)品:Trimmer Capacitors - Ceramic Dielectric |
| AP-30 | 制造商:Mac8 功能描述: |
| AP3000A-00 | 制造商:ASI 制造商全稱:ASI 功能描述:SILICON PIN DIODE CHIP |
| AP3000C-11 | 制造商:ASI 制造商全稱:ASI 功能描述:SILICON PIN DIODE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。