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參數(shù)資料
| 型號： | AP30N30W |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 36 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 120K |
| 代理商： | AP30N30W |
AP30N30W
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
0
10
20
30
40
50
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
I
D
T
C
=25
o
C
10V
7.0V
6.0V
5.0V
V
G
=4.5V
0
10
20
30
40
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
I
D
T
C
=150
o
C
V
G
=4.5V
10V
7.0V
6.0V
5.0V
40
80
120
160
2
4
6
8
10
V
GS
Gate-to-Source Voltage (V)
R
D
)
I
D
=15A
T
C
=25
o
C
0.3
0.8
1.3
1.8
2.3
2.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=15A
V
G
=10V
0
3
6
9
12
15
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
0
0.5
1
1.5
2
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
N
G
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| AP3302H | N-CHANNEL ENHANCEMENT MODE |
| AP3302J | N-CHANNEL ENHANCEMENT MODE |
| AP3303H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3303J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3310J | P-CHANNEL ENHANCEMENT MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP30N30WI | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30P10GH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30P10GI | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30P10GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30P10GS | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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