參數(shù)資料
型號: AP28G40GEO
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: IGBT 晶體管
英文描述: 400 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, TSSOP-8
文件頁數(shù): 3/4頁
文件大小: 103K
代理商: AP28G40GEO
Fig 7. Typical Capacitance Characterisitics
Fig 8. Maximum Pulse Collector Current
Fig 9. Switching Time Test Circuit
Fig 10. Switching Time Waveform
Fig 11. Gate Charge Test Circuit
Fig 12. Gate Charge Waveform
3/3
AP28G40GEO
td(on) tr
td(off) tf
VCE
VGE
10%
90%
TO THE
OSCILLOSCOPE
-
+
4V
C
G
E
VCE
VGE
RG
RC
VCC=320 V
10
100
1000
10000
1
5
9
1317
212529
3337
V CE , Collector-Emitter Voltage (V))
C
(
p
F)
f=1.0MHz
Cies
Coes
Cres
0
1
2
3
4
5
6
0
20
40
60
80
100
120
Q G , Gate Charge (nC)
V
GE
,
G
a
te
-
E
mitte
rVoltage
(
V
)
I CP =40A
V CE =200V
0
40
80
120
160
024
68
10
V GE , Gate-to-Emitter Voltage (V)
I
CP
,
Pe
ak
C
o
lle
c
tor
C
u
rre
n
t(
A
)
T A =25
o C
VCC=200V
TO THE
OSCILLOSCOPE
-
+
C
G
VCE
VGE
IC
IG
1~3mA
E
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