參數(shù)資料
型號： AP2302S5TR
廠商： BCD Semiconductor Manufacturing Limited
英文描述： 3A DDR TERMINATION REGULATOR
中文描述： 第3A DDR終端穩(wěn)壓器
文件頁數(shù)： 4/13頁
文件大小： 166K
代理商： AP2302S5TR
3A DDR TERMINATION REGULATOR AP2302
Preliminary Datasheet
4
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
Absolute Maximum Ratings (Note 1)
Recommended Operating Conditions
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Parameter
Symbol
Value
Unit
Supply Voltage for Internal Circuit
V
CNTL
7
V
Power Dissipation
P
D
Internally Limited
W
ESD (Human Body Model)
ESD
2
KV
Junction Temperature
T
J
150
o
C
Storage Temperature Range
T
STG
-65 to 150
o
C
Lead Temperature (Soldering, 10sec)
T
LEAD
260
o
C
Package Thermal Resistance (Free Air)
θ
JA
SOIC-8
160
o
C/W
TO-252-5L
130
TO-263-5L
90
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for Internal Circuit
V
CNTL
(Note 2, 3)
3.3
6
V
Power Input
DDR I
V
IN
1.6
2.5
V
CNTL
V
DDR II
1.8
Junction Temperature
T
J
0
125
o
C
Note 2: Keep V
CNTL
Note 3: For safe operation, V
CNTL
MUST be tied to 3.3V rather than 5V.
V
IN
in power on and power off sequences.
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