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參數(shù)資料
| 型號(hào)： | AP2302MTR |
| 廠商： | BCD Semiconductor Manufacturing Limited |
| 英文描述： | 3A DDR TERMINATION REGULATOR |
| 中文描述： | 第3A DDR終端穩(wěn)壓器 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 166K |
| 代理商： | AP2302MTR |
3A DDR TERMINATION REGULATOR AP2302
Preliminary Datasheet
5
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output Offset Voltage
V
OS
I
L
=0A (Note 4)
I
L
=0 to 1.5A
I
L
=0 to -1.5A
I
L
=0 to 1.5A
I
L
=0 to -1.5A
No Load
V
REFEN
<0.2V, R
L
=180
-20
0
20
mV
Load
Regulation
DDR I
V
OUT
/
V
OUT
0.8
2
%
0.8
2
DDR II
1.2
3
1.2
3
Quiescent Current of V
CNTL
Leakage Current in Shutdown Mode
I
Q
3
5
mA
μ
A
I
SHDN
3
6
Protection
Current Limit
I
LIMIT
T
SHDN
3
A
Thermal Shutdown Temperature
3.3V
≤
V
CNTL
≤
5V
150
o
C
o
C
Thermal Shutdown Hysteresis
50
Shutdown Function
Shutdown Threshold Trigger
Output=High
0.8
V
Output=Low
0.2
Electrical Characteristics
(T
J
=25
o
C,
V
IN
=2.5V, V
CNTL
=3.3V, V
REFEN
=1.25V, C
OUT
=10
μ
F (Ceramic), unless otherwise specified.)
Note 4: V
OS
is the voltage measurement defined as V
OUT
subtracted from V
REFEN
.
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| AP2302MTR-E1 | 3A DDR TERMINATION REGULATOR |
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| AP2302S5TR | 3A DDR TERMINATION REGULATOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP2302MTR-E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
| AP2302N | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP2302N-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2302S5 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
| AP2302S5-E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
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