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參數(shù)資料
| 型號(hào)： | AP2302D-E1 |
| 廠商： | BCD Semiconductor Manufacturing Limited |
| 英文描述： | 3A DDR TERMINATION REGULATOR |
| 中文描述： | 第3A DDR終端穩(wěn)壓器 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大小： | 166K |
| 代理商： | AP2302D-E1 |
3A DDR TERMINATION REGULATOR AP2302
Preliminary Datasheet
7
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
25
50
75
100
125
0.16
0.18
0.20
0.22
0.24
0.26
0.28
0.30
V
CNTL
=3.3V
V
REFEN
=1.0V
R
D
(
)
Junction Temperature (
o
C)
V
IN
=0.9V
V
IN
=0.85V
V
IN
=0.8V
25
50
75
100
125
0.16
0.18
0.20
0.22
0.24
0.26
0.28
0.30
V
CNTL
=5.0V
V
REFEN
=1.0V
R
D
)
Junction Temperature (
o
C)
V
IN
=0.9V
V
IN
=0.85V
V
IN
=0.8V
Typical Performance Characteristics (Continued)
Figure 10. R
DS(on)
vs. Junction Temperature
Figure 11. R
DS(on)
vs. Junction Temperature
Figure 8. 0.9V
TT
at 3A Transient Response
(Conditions: V
IN
=2.5V, V
CNTL
=3.3V, C
OUT
=10
μ
F)
Figure 9. 1.25V
TT
at 3A Transient Response
(Conditions: V
IN
=2.5V, V
CNTL
=3.3V, C
OUT
=10
μ
F)
Time (
μ
s)
Time (
μ
s)
O
V
O
t
C
20
-20
3
-3
O
V
O
t
C
0
40
-1
1
-5
20
-20
3
-3
0
40
-1
1
-5
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| AP2302DTR | 3A DDR TERMINATION REGULATOR |
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| AP2302M | 3A DDR TERMINATION REGULATOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP2302DTR | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
| AP2302DTR-E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
| AP2302GN | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2302GN-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V gate drive, Small package outline |
| AP2302L | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
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