參數(shù)資料
型號: AP2213M-3.0TRE1
廠商: BCD SEMICONDUCTOR MANUFACTURING LTD
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: 500mA LOW NOISE LDO REGULATOR
中文描述: 3 V FIXED POSITIVE LDO REGULATOR, 0.7 V DROPOUT, PDSO8
封裝: ROHS COMPLIANT, SOIC-8
文件頁數(shù): 7/21頁
文件大小: 306K
代理商: AP2213M-3.0TRE1
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
7
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
Parameter
Ripple Rejection
Symbol
PSRR
Conditions
Min
Typ
75
Max
Unit
dB
f=100Hz, I
OUT
=100
μ
A
V
OUT
=0V
I
OUT
=50mA, C
OUT
=2.2
μ
F,
100pF from BYP to GND
Current Limit
I
LIMIT
700
1000
mA
Output Noise
e
no
260
Enable Input Logic-low
Voltage
V
IL
Regulator shutdown
0.4
V
0.18
Enable Input Logic-high Voltage
V
IH
Regulator enabled
V
IL
0.4V
V
IL
0.18V
V
IL
2.0V
V
IL
2.0V
2.0
V
Enable Input Logic-low Current
I
IL
0.01
1
μ
A
2
Enable Input Logic-high Current
I
IH
5
20
μ
A
25
Hz
nV
/
Note 2: Specifications in bold type are limited to
-40
o
C
T
J
125
o
C. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T
J
=25
o
C) or 2% (-
40
o
C
T
J
125
o
C)
below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
Electrical Characteristics (Continued)
AP2213-2.5 Electrical Characteristics
V
IN
=3.5V, I
OUT
=100
μ
A, C
IN
=1.0
μ
F, C
OUT
=2.2
μ
F, V
EN
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-
40
o
C
T
J
125
o
C (Note 2),
unless
otherwise specified.
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