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參數(shù)資料
| 型號： | AP2213M-2.5E1 |
| 廠商： | BCD SEMICONDUCTOR MANUFACTURING LTD |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | 500mA LOW NOISE LDO REGULATOR |
| 中文描述： | 2.5 V FIXED POSITIVE LDO REGULATOR, 0.7 V DROPOUT, PDSO8 |
| 封裝： | ROHS COMPLIANT, SOIC-8 |
| 文件頁數(shù)： | 18/21頁 |
| 文件大小： | 306K |
| 代理商： | AP2213M-2.5E1 |
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
18
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
Input Capacitor
A 1
μ
F minimum capacitor is recommended to be
placed between V
IN
and GND.
Output Capacitor
It is required to prevent oscillation. 1
μ
F minimum is
recommended when C
BYP
is unused. 2.2
μ
F mini-
mum is recommended when C
BYP
is 100pF. The out-
put capacitor may be increased to improve transient
response.
Noise Bypass Capacitor
Bypass capacitor is connected to the internal voltage
reference. A 100pF capacitor connected from BYP to
GND make this reference quiet, resulting in a
significant reduction in output noise, but the ESR
stable area will be narrowed.
The start-up speed of the AP2213 is inversely
proportional to the value of reference bypass
capacitor. In some cases, if output noise is not a
major concern and rapid turn-on is necessary, omit
C
BYP
and leave BYP open.
Power Dissipation
Thermal shutdown may take place if exceeding the
maximum power dissipation in application. Under all
possible operating conditions, the junction tempera-
ture must be within the range specified under abso-
lute maximum ratings to avoid thermal shutdown.
To determine if the power dissipated in the regulator
reaches the maximum power dissipation (see figure
16, 17), using:
T
J
= P
D
*
θ
JA
+ T
A
P
D
=(V
IN
-V
OUT
)*I
OUT
+V
IN
*I
GND
Where: T
J
≤
T
J(max)
,
T
J(max)
is absolute maximum rat-
ings for the junction temperature; V
IN
*I
GND
can be
ignored due to its small value.
T
J(max)
is 150
o
C,
θ
JA
is 90
o
C/W for TO-252-2 (1)
package and 160
o
C/W for SOIC-8 package.
Example: For 2.5V version packaged in SOIC-8,
I
OUT
=500mA, T
A
=50
o
C, V
IN(Max)
is:
(150
o
C-50
o
C)/(0.5A*160
o
C/W)+2.5V=3.75V
Therefore, for good performance, please make sure
that input voltage is less than 3.75V without heatsink
when T
A
=50
o
C.
Application Information
相關PDF資料 |
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|---|---|
| AP2213M-2.5TRE1 | 500mA LOW NOISE LDO REGULATOR |
| AP2213M-3.0E1 | 500mA LOW NOISE LDO REGULATOR |
| AP2213M-3.0TRE1 | 500mA LOW NOISE LDO REGULATOR |
| AP2213M-3.3E1 | 500mA LOW NOISE LDO REGULATOR |
| AP2213M-3.3TRE1 | 500mA LOW NOISE LDO REGULATOR |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP2213M-3.0E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:500mA LOW NOISE LDO REGULATOR |
| AP2213M-3.0G1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:500mA LOW NOISE LDO REGULATOR |
| AP2213M-3.0TRE1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:500mA LOW NOISE LDO REGULATOR |
| AP2213M-3.0TRG1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:500mA LOW NOISE LDO REGULATOR |
| AP2213M-3.3E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:500mA LOW NOISE LDO REGULATOR |
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