參數(shù)資料
型號(hào): AP2202K-2.5TR
廠商: BCD Semiconductor Manufacturing Limited
英文描述: 150mA RF ULDO REGULATOR
中文描述: 150mA的射頻ULDO調(diào)節(jié)器
文件頁數(shù): 8/13頁
文件大?。?/td> 176K
代理商: AP2202K-2.5TR
150mA RF ULDO REGULATOR AP2202
Preliminary Datasheet
8
Aug. 2005 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics
Figure 4. Output Voltage vs. Junction Temperature
-60
-40
-20
0
20
40
60
80
100
120
140
2.700
2.725
2.750
2.775
2.800
2.825
2.850
2.875
2.900
O
Junction Temperature (
o
C)
AZ2202-2.8V
Figure 5.
Dropout Voltage vs. Junction Temperature
-60
-40
-20
0
20
40
60
80
100
120
140
0
50
100
150
200
250
300
350
D
Junction Temperature (
o
C)
I
OUT
=50mA
I
OUT
=100mA
I
OUT
=150mA
C
IN
=1.0
μ
F, C
L
=2.2
μ
F, C
BYP
=1nF
Electrical Characteristics (Continued)
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal
value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Figure 6. Quiescent Current vs. Output Current
Figure 7. Quiescent Current vs. Junction Temperature
-60
-40
-20
0
20
40
60
80
100
120
140
-2000
-1000
0
1000
2000
3000
4000
5000
AP2202-2.8V
I
OUT
=50mA
I
OUT
=100mA
I
OUT
=150mA
V
IN
=3.8V,V
EN
=2.0V,C
IN
=1.0
μ
F,
C
L
=2.2
μ
F,C
BYP
=1nF
Junction Temperature (
o
C)
Q
μ
A
0
10
20
30
40
50
60
70
80
90 100 110 120 130 140 150
-4
-3
-2
-1
0
1
2
3
4
5
6
Q
Output Current (mA)
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