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參數(shù)資料
| 型號(hào)： | AP20GT60SW |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | AP20GT60SW |
AP20GT60SW
Fig 1. Typical Output Characteristics
Fig 2. Gate Charge Characterisitics
Fig 3. Typical Saturation Voltage
Fig 4. Typical Collector- Emitter Voltage
Characteristics
v.s. Junction Temperature
--
Fig 5. Gate Threshold Voltage
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2
0
40
80
120
160
200
02
468
10
12
V CE , Collector-Emitter Voltage (V)
I
C
,
C
o
llecto
rC
u
rr
en
t(A
)
20V
18V
15V
12V
V GE =10V
T C =25
o C
0
1
2
3
4
0
40
80
120
160
Junction Temperature (
o C)
V
CE(
sa
t)
,S
a
tu
ra
tion
Voltage(
V
)
I C =40 A
I C =20A
V GE =15 V
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
Junction Temperature (
o C )
No
rm
a
lized
V
GE
(t
h)
(V
)
0
20
40
60
80
100
120
01
234
56
V CE , Collector-Emitter Voltage (V)
I
C
,Colle
ct
or
Curre
nt(
A
)
V GE =15V
T C =25 ℃
0
1000
2000
3000
4000
5000
1
5
9
1317
2125
29
V CE , Collector-Emitter Voltage (V)
Capac
it
a
n
ce
(
p
F)
f=1.0MHz
C ies
C oes
C res
T C =150 ℃
0
4
8
12
16
0
20
40
60
80
100
120
Q G , Gate Charge (nC)
V
GE
,
Ga
te
-E
mitter
V
o
lta
g
e(V
)
I C =20A
V CC =480V
I C =10mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP20GT60W | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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| AP20N03GS | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP20N03H | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP20N03J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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