參數(shù)資料
型號: AP137-501
元件分類: 放大器
英文描述: 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
文件頁數(shù): 4/4頁
文件大?。?/td> 59K
代理商: AP137-501
4
Alpha Industries, Inc. [978] 241-7000
Fax [978] 241-7906 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 2/02A
Quad-Band GSM Power Amplifier Module
AP137-501
1
2
3
4
5
13
12
11
10
9
67
8
16
15
14
Si ASIC
VAPC
GND
VCC-PAC
VCC
VBS
GND
DCS/PCS_In
GSM_In
V
cc
V
CC
GND
DCS/PCS_Out
GSM_Out
Pin Out
1
16
2
3
4
5
6
13
9
11
VCC
DCS/
PCS_In
GSM_In
GSM_Out
VAPC
VCC
DCS/
PCS_Out
VCC
VBS
50
Microstrip
50
Microstrip
50
Microstrip
50
Microstrip
Application Schematic
Pin Out Description
Pin
Symbol
Description
1
DCS/PCS_In
RF input to DCS/PCS power amplifier.
2VAPC
Analog power control input voltage.
10 nF RF bypassing capacitor
recommended.
3VCC-PAC
Power supply input voltage for the
silicon ASIC. A 10
F RF bypassing
capacitor is required. This capacitor
is only required to help reduce power
supply ripple on the test board.
4VBS
Band select input voltage.
5
GSM_In
RF input to GSM850/GSM900 power
amplifier.
6VCC
Power supply input voltage. 10
F RF
bypassing capacitor is required. This
capacitor is only required to help reduce
power supply ripple on the test board.
7
GND
Ground connection.
8
GND
Ground connection.
9
GSM_Out
RF output for GSM850/GSM900
amplifier.
10
GND
Ground connection.
11
VCC
Power supply input voltage. 10
F RF
bypassing capacitor is required. This
capacitor is only required to help reduce
power supply ripple on the test board.
12
GND
Ground connection.
13
DCS/PCS_Out
RF output for DCS/PCS power amplifier.
14
GND
Ground connection.
15
GND
Ground connection.
16
VCC
Power supply input voltage. 10
F RF
bypassing capacitor is required. This
capacitor is only required to help reduce
power supply ripple on the test board.
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