參數(shù)資料
型號: AP10N70S
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: ROHS COMPLIANT, TO-263, 3 PIN
文件頁數(shù): 3/5頁
文件大?。?/td> 0K
代理商: AP10N70S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
AP10N70S
0.8
0.9
1
1.1
1.2
1.3
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
0
4
8
12
16
20
0
5
10
15
20
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
6.0V
5.0V
4.5V
V G =4.0V
0.8
1.2
1.6
2
2.4
2.8
3.2
25
50
75
100
125
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
R
DS(ON)
I D =5A
V G =10V
0
4
8
12
16
0
10
203040
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
6.0V
5.0V
4.5V
V G = 4.0V
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A)
T j = 150
o CT
j = 25
o C
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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