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參數(shù)資料
| 型號(hào)： | AP09N50I |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 500 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | AP09N50I |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
500
-
V
RDS(ON)
Static Drain-Source On-Resistance
3
VGS=10V, ID=4.5A
-
0.75
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
5.1
-
S
IDSS
Drain-Source Leakage Current
VDS=400V, VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=±30V
-
±100
nA
Qg
Total Gate Charge
3
ID=6A
-
32
51
nC
Qgs
Gate-Source Charge
VDS=400V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
14
-
nC
td(on)
Turn-on Delay Time
3
VDD=250V
-
35
-
ns
tr
Rise Time
ID=6A
-
45
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
164
-
ns
tf
Fall Time
RD=42Ω
-48
-
ns
Ciss
Input Capacitance
VGS=0V
-
1370
2200
pF
Coss
Output Capacitance
VDS=25V
-
125
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
7
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
3
IS=6A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
3
IS=6A, VGS=0V
-
340
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
4.4
-
uC
Notes:
1.Pulse width limited by Max junction temperature.
2.Starting Tj=25
oC , V
DD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP09N50I
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