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參數(shù)資料
| 型號(hào)： | AP09N20H-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 8.6 A, 200 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 216K |
| 代理商： | AP09N20H-HF |
AP09N20H/J-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
R
DS(ON)
I D =5A
V GS =10V
0
2
4
6
8
10
12
14
16
18
02468
10
12
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
8.0V
7.0V
5.0V
V G =4.0V
0
2
4
6
8
10
02468
10
12
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
8.0V
7.0V
V G =4.0V
5.0V
0
1
2
3
4
5
6
7
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
1
2
3
4
5
-50
0
50
100
150
T j , Junction Temperature (
o C )
V
GS(t
h)
(V
)
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相關(guān)代理商/技術(shù)參數(shù) |
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