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參數(shù)資料
| 型號(hào)： | AP0903GH-HF |
| 廠(chǎng)商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 51 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | AP0903GH-HF |
AP0903GH-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
1
10
100
1000
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
02468
10
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =20A
V DS =15V
V DS =18V
V DS =24V
0
200
400
600
800
1
5
9
1317
2125
29
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
Q
VG
4.5V
QGS
QGD
QG
Charge
td(on) tr
td(off) tf
VDS
VGS
10%
90%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP0903GMA | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP0903GM-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low On-resistance, Fast Switching Characteristic |
| AP0903GYT-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Good Thermal Dissipation |
| AP0904GH-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement |
| AP0904GJB-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement, Fast Switching Characteristic |
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