參數(shù)資料
型號： AP03N70P
廠商： Advanced Power Technology Ltd.
英文描述： N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： N溝道增強型功率MOSFET
文件頁數(shù)： 2/6頁
文件大小： 83K
代理商： AP03N70P
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA / -
V
GS
=0V, I
D
=1mA / A
600
-
-
V
650
-
-
V
V
GS
=0V, I
D
=1mA / H
700
-
-
V
Δ
B
V
DSS
/
Δ
T
j
R
DS(ON)
V
GS(th)
g
fs
I
DSS
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
Gate Threshold Voltage
-
0.6
-
V/
℃
V
GS
=10V, I
D
=1.6A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=1.6A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=
I
D
=3.3A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=3.3A
R
G
=10
Ω
,
V
GS
=10V
R
D
=91
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
-
2
-
-
3.6
4
Ω
V
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
2
-
-
-
-
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
Drain-Source Leakage Current (T
j
=25
o
C)
10
100
Drain-Source Leakage Current (T
j
=150
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
11.4
3.1
4.2
8.4
6
17.7
-
-
-
-
-
-
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
5.9
600
45
4
-
-
-
-
ns
pF
pF
pF
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Test Conditions
V
D
=V
G
=0V , V
S
=1.5V
Min.
-
-
-
Typ.
-
-
-
Max.
3.3
13.2
1.5
Units
A
A
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
3
T
j
=25
℃
, I
S
=3.3A, V
GS
=0V
V
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=15mH , R
G
=25
Ω
, I
AS
=3.3A.
3.Pulse width <300us , duty cycle <2%.
Ordering Code
AP03N70P- X : X Denote BV
DSS
Grade
Blank = BV
DSS
600V
A
= BV
DSS
650V
H
= BV
DSS
700V
AP03N70P
±
100
±
30V
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