參數(shù)資料
型號: AP03N40J-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 2.1 A, 400 V, 3.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 2/4頁
文件大?。?/td> 92K
代理商: AP03N40J-HF
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
400
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=1A
-
3.3
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.8A
-
2.6
-
S
IDSS
Drain-Source Leakage Current
VDS=400V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=1.8A
-
8.2
13
nC
Qgs
Gate-Source Charge
VDS=320V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
3.7
-
nC
td(on)
Turn-on Delay Time
2
VDD=200V
-
10
-
ns
tr
Rise Time
ID=1.8A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
25
-
ns
tf
Fall Time
RD=111Ω
-11
-
ns
Ciss
Input Capacitance
VGS=0V
-
290
460
pF
Coss
Output Capacitance
VDS=25V
-
32
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
5.5
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
2
IS=1.8A, VGS=0V,
-
180
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
870
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP03N40J-HF
2
相關(guān)PDF資料
PDF描述
AP03N70J-A-HF 3.3 A, 650 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP03N70H-A-HF 3.3 A, 650 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP0420NA 15 mA, 200 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
AP0440NA 15 mA, 400 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
AP0430NA 15 mA, 300 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP03N70F 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE
AP03N70F-A 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP03N70F-H 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP03N70H 制造商:未知廠家 制造商全稱:未知廠家 功能描述:600V 4A TO-251
AP03N70H-A-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET