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參數(shù)資料
| 型號： | AOL1712 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 65 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | GREEN, ULTRASO-8, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 253K |
| 代理商： | AOL1712 |
AOL1712
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
0.1
TJ=125°C
20
IGSS
±100
nA
VGS(th)
Gate Threshold Voltage
1.4
1.8
2.5
V
ID(ON)
80
A
3.5
4.2
TJ=125°C
5.5
6.6
4.4
5.5
gFS
90
S
VSD
0.36
0.5
V
IS
65
A
Ciss
3940
5120
pF
Coss
590
pF
Crss
255
pF
Rg
0.72
1.1
Qg(10V)
73
95
nC
Qg(4.5V)
35
nC
Qgs
10.4
nC
Qgd
12.4
nC
tD(on)
9.8
ns
tr
8.4
ns
tD(off)
45
ns
tf
10
ns
trr
36
43
ns
Qrr
32
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate Source Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Turn-Off Fall Time
Turn-On DelayTime
VGS=4.5V, ID=20A
IS=1A,VGS=0V
VDS=5V, ID=20A
Turn-On Rise Time
Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
m
Maximum Body-Diode + Schottky Diode Continuous Current
H
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VDS=VGS ID=250A
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
Zero Gate Voltage Drain Current
mA
VDS=0V, VGS= ±12V
Gate-Body leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/s
Drain-Source Breakdown Voltage
On state drain current
ID=250A, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=20A
Reverse Transfer Capacitance
IF=20A, dI/dt=300A/s
A: The value of RθJA is measured with the device in a still air environment with T A=25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1
ST 2008)
Rev3: July. 2008
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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