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參數(shù)資料
| 型號(hào)： | AOD405L |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | LJT 37C 37#22D PIN RECP |
| 中文描述： | 的P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 139K |
| 代理商： | AOD405L |
AOD405, AOD405L
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-30
V
-0.003
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-2.4
nA
V
A
-1.2
-40
-2
24.5
36
41
17
-0.76
32
43
60
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-1
-18
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge (10V)
920
190
122
3.6
1100
pF
pF
pF
4.5
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
18.7
9.7
2.54
5.4
9
25
20
12
21.4
13
23
11.7
nC
nC
nC
nC
ns
ns
ns
ns
13
35
30
18
26
16
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-18A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-18A
Reverse Transfer Capacitance
Gate resistance
I
F
=-18A, dI/dt=100A/
μ
s
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
μ
A
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=-4.5V, I
D
=-10A
V
DS
=-5V, I
D
=-18A
I
S
=-1A,V
GS
=0V
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=0.82
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Input Capacitance
Output Capacitance
Turn-On DelayTime
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=-10V, V
DS
=-15V, I
D
=-18A
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on steady-state R
θ
JA
and the maximum allowed junction temperature of 150°C. The value in any a given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Alpha & Omega Semiconductor, Ltd.
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