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參數(shù)資料
| 型號： | AO4410 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 112K |
| 代理商： | AO4410 |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
31
59
16
Max
40
75
24
R
θ
JL
W
Junction and Storage Temperature Range
A
P
D
°C
3
2.1
-55 to 150
T
A
=70°C
I
D
Continuous Drain
Current
A
Pulsed Drain Current
B
Maximum
30
±12
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
T
A
=70°C
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
18
15
80
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Power Dissipation
T
A
=25°C
Gate-Source Voltage
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
≤
10s
R
θ
JA
AO4410
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 18A (V
GS
= 10V)
R
DS(ON)
< 5.5m
(V
GS
= 10V)
R
DS(ON)
< 6.2m
(V
GS
= 4.5V)
General Description
The AO4410 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity,
body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a
low side switch in Notebook CPU core power
conversion.
Standard product AO4410 is Pb-free
(meets ROHS & Sony 259 specifications). AO4410L
is a Green Product ordering option. AO4410 and
AO4410L are electrically identical.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.
相關PDF資料 |
PDF描述 |
|---|---|
| AO4410L | N-Channel Enhancement Mode Field Effect Transistor |
| AO4411 | P-Channel Enhancement Mode Field Effect Transistor |
| AO4411L | P-Channel Enhancement Mode Field Effect Transistor |
| AO4412 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4412L | N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AO4410_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO4410L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO4411 | 功能描述:MOSFET P CH 30V 8A SOIC 8 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| AO4411_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4411L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
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