參數(shù)資料
型號(hào)： AO4407
廠商： ALPHA AND OMEGA SEMICONDUCTOR
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 12000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： GREEN, SOIC-8
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 531K
代理商： AO4407
AO4407
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
VDS=-30V, VGS=0V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
Gate Threshold Voltage
-1.7
-2.25
-2.8
V
ID(ON)
-60
A
8.5
13
m
10
14
TJ=125°C
12
19
30
m
gFS
27
S
VSD
-0.72
-1
V
IS
-4
A
Ciss
2060
2600
pF
Coss
370
pF
Crss
295
pF
Rg
1.2
2.4
3.6
Qg
24
30
36
nC
Qgs
4.6
nC
Qgd
10
nC
tD(on)
11
ns
t
9.4
ns
Drain-Source Breakdown Voltage
On state drain current
ID=-250A, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-12A
Reverse Transfer Capacitance
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
m
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
VDS=VGS ID=-250A
VDS=0V, VGS= ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
IS=-1A,VGS=0V
VDS=-5V, ID=-10.5A
VGS=-5V, ID=-7A
Turn-On Rise Time
Forward Transconductance
Diode Forward Voltage
VGS=-20V, ID=-12A
V
=-10V, V =-15V,
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-12A
Gate Source Charge
Gate Drain Charge
RDS(ON)
Static Drain-Source On-Resistance
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
tr
9.4
ns
tD(off)
24
ns
tf
12
ns
trr
30
40
ns
Qrr
22
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
IF=-12A, dI/dt=100A/s
Turn-On Rise Time
VGS=-10V, VDS=-15V,
RL=1.25, RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/s
Turn-Off DelayTime
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 13: July 2010
www.aosmd.com
Page 2 of 5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AO4407_10 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET
AO4407A 功能描述:MOSFET P-CH -30V -12A 8-SOIC RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
AO4407A_10 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET
AO4407AL 制造商:AOS 功能描述:MOSFET
AO4407B 功能描述:MOSFET P-CH 30V 12A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:* 零件狀態(tài):過(guò)期 標(biāo)準(zhǔn)包裝:1
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