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參數(shù)資料
| 型號： | AO3703 |
| 廠商： | ALPHA |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | P通道增強(qiáng)模式場的肖特基二極管晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 115K |
| 代理商： | AO3703 |
AO3703
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-20
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-1
nA
V
A
-0.3
-10
-0.6
76
111
101
134
7
-0.78
97
135
130
190
T
J
=125°C
m
m
S
V
A
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4
-1
-2
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
540
72
49
12
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
6.1
0.6
1.6
10
12
44
22
21
7.5
nC
nC
nC
ns
ns
ns
ns
ns
nC
0.39
0.5
0.1
20
V
C
T
t
rr
Q
rr
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating. Rev0: July 2006
34
5.2
0.8
pF
ns
nC
10
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICA
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
mA
V
R
=16V, T
J
=125°C
V
R
=10V
I
F
=1A, dI/dt=100A/
μ
s
I
F
=1A, dI/dt=100A/
μ
s
I
rm
I
F
=-2.7A, dI/dt=100A/
μ
s
I
F
=-2.7A, dI/dt=100A/
μ
s
Junction Capacitance
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
I
F
=0.5A
V
R
=16V
Maximum reverse leakage current
Gate resistance
Turn-On DelayTime
Turn-On Rise Time
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-4.5V, V
DS
=-10V, I
D
=-2.7A
V
GS
=-4.5V, V
DS
=-10V, R
L
=2.8
,
R
GEN
=3
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=-10V, f=1MHz
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-2.7A
I
S
=-1A,V
GS
=0V
m
V
GS
=-2.5V, I
D
=-2A
V
GS
=-1.8V, I
D
=-1A
On state drain current
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-2.7A
R
DS(ON)
Static Drain-Source On-Resistance
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250
μ
A
Drain-Source Breakdown Voltage
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-16V, V
GS
=0V
Gate Threshold Voltage
Gate-Body leakage current
I
DSS
Zero Gate Voltage Drain Current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
μΑ
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
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